Addendum to 68HC912BD32 Technical Data - Data Sheet

This addendum provides changes to the 68HC912BD32 Advance Information Technical Data Book.

MW6IC1940NBR1, MW6IC1940GNBR1 1920-2000 MHz, 40 W, 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived

The MW6IC1940NB/GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz.

MW6IC1940GNBR1 1920-2000 MHz, 40 W, 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived

The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz.

MWE6IC9100NR1, MWE6IC9100GNR1, MWE6IC9100NBR1 960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers - Archived

The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz.

MRF5S9150HR3, MRF5S9150HSR3 880 MHz, 33 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for N-CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

MRF18030ALR3 1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF18030ALSR3 1800-1880 MHz, 30 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz.

MRF18085ALR3 1805-1880 MHz, 85 W, 26 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFET - Archived

Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF19030LR3, MRF19030LSR3 1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF9060LR1, MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source