MHVIC915R2 746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE, RF LDMOS Wideband Integrated Power Amplifier - Archived
The MHVIC915R2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz.
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MHVIC915R2 746-960 MHz, 15 W, 27 V Single N-CDMA, GSM/GSM EDGE, RF LDMOS Wideband Integrated Power Amplifier - Archived
The MHVIC915R2 wideband integrated circuit is designed with on-chip matching that makes it usable from 750 to 1000 MHz.
MRF6S18140HR3, MRF6S18140HSR3 1805-1880 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs - Archived
Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MW4IC915MBR1, MW4IC915GMBR1 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived
MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi
MRF5S19060MR1, MRF5S19060MBR1 1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs - Archived
Designed for broadband commercial and industrial applications with frequencies from 1930-1990 MHz.
MRF5S19090HR3, MRF5S19090HSR3 1990 MHz, 18 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs - Archived
Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S19100LR3, MRF5S19100LSR3 1990 MHz, 22 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S19130R3, MRF5S19130SR3 1990 MHz, 26 W Avg., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S21045MR1, MRF5S21045MBR1 2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Archived
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for W-CDMA station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.