MRF5S9150HR3 880 MHz, 33 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET - Archived

Designed for N -CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

ARCHIVED 2005 - MCM67M618A 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write

MCM67M618A 64K x 18 Bit BurstRAM Synchronous Fast Static RAM

MRF187, MRF187R3, MRF187SR3 1.0 GHz, 85 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source

MRF281SR1, MRF281ZR1 1930-1990 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial

MRF373R1, MRF373SR1 470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common

MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MHVIC2114R2 2100 MHz, 27 V, 23 dBm, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.

MHVIC2115NR2 2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

MHVIC2115NR2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.

MHVIC2115R2 2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.