N-channel silicon FET
BFT46 DATA SHEET Product specification December 1997 DISCRETE SEMICONDUCTORS BFT46 N-channel silicon FET NXP Semiconductors Product specification N-channel silicon FET BFT46
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N-channel silicon FET
BFT46 DATA SHEET Product specification December 1997 DISCRETE SEMICONDUCTORS BFT46 N-channel silicon FET NXP Semiconductors Product specification N-channel silicon FET BFT46
NPN 5 GHz wideband transistor
BFT25A 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket
NPN 5 GHz wideband transistor
BFS25A DATA SHEET Product specification December 1997 DISCRETE SEMICONDUCTORS BFS25A NPN 5 GHz wideband transistor NXP Semiconductors Product specification NPN 5 GHz
Silicon N-channel dual gate MOS-FET
BF992 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data
N-channel dual-gate MOS-FET
BF991 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
BDM Multilink Rev B Technical Summary - Data Sheet
P&E’s BDM MULTILINK Interface Cable provides access to the Background Debug Mode (BDM) on Motorola HCS08, HC12 and HCS12 micro-controllers.
Silicon PIN diode
BAP142LX 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits пЃ® High voltage, current
AFT23S170-13SR3 2300-2400 MHz, 45 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor - Data Sheet
The AFT23S170-13SR3 45 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.
AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V Data Sheet
AFT23H201-24S 2300-2400 MHz, 45 W Avg, 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
AFT18HW355SR6 1805-1880 MHz, 63 W Avg., 28 V AirfastВ® RF Power LDMOS Transistors - Data Sheet
AFT18HW355SR6 is a 63 watt asymmetrical Doherty RF power LDMOS transistor and is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering