MHW10247AN 1000 MHz, 25.5 dB Gain 132-Channel GaAs CATV Amplifier Module - Archived
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler Amplifier Module
MHW10247AN 1000 MHz, 25.5 dB Gain 132-Channel GaAs CATV Amplifier Module - Archived
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler Amplifier Module
MHW10236N 1000 MHz, 23.8 dB Gain 132-Channel GaAs CATV Amplifier Module - Archived
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
MHW10188AN 1000 MHz, 21 dB Gain 132-Channel GaAs CATV Amplifier Module - Archived
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler Amplifier Module
MHW10186N 1000 MHz, 18.5 dB Gain 132-Channel GaAs CATV Amplifier Module - Archived
24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
MHL9838N 800-925 MHz, 8.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9838 800-925 MHz 8.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived
30 W, 2.0 GHz, NPN Silicon Broadband RF Power Transistor
MHL9318N 3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9318 3.0 W, 17.5 dB, 860-900 MHz RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236NN 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.