Главная » Материалы за 13.02.2020 » Страница 24
Автор: Tonich от 13-02-2020, 16:49

MHL9236N 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL9236MN 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL21336NN 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL21336N 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL19936N 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL19926N 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.

Автор: Tonich от 13-02-2020, 16:49

MHL19338NN 1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.