MRFE6VP8600HR6, MRFE6VP8600HR5, MRFE6VP8600HSR6, MRFE6VP8600HSR5 470-860 MHz, 600 W, 50 V Lateral N-Channel Broadband RF Power Transistors

Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or digital

MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet

Extremely rugged 600 W transistors for ISM, broadcast, aerospace and mobile radio applications between 1.8 and 600 MHz.

MRFE6VP6300HR3, MRFE6VP6300HSR3 1.8-600 MHz, 300 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 1.8 and 600 MHz. These devices are suitable for use in high VSWR industrial, broadcast and aerospace applications.

MRFE6VP61K25N, MRFE6VP61K25GN 1.8–600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors Data Sheet

MRFE6VP61K25N, MRFE6VP61K25GN are extremely rugged 1250 W transistor for ISM, broadcast, aerospace and mobile radio applications between 1.8 and 600 MHz.

MRFE6VP61K25H, MRFE6VP61K25HS, MRFE6VP61K25GS 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

MRFE6VP61K25H, MRFE6VP61K25HS, and MRFE6VP61K25GS are high ruggedness devices and are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital

MRFE6VP5600HR6, MRFE6VP5600HSR6 1.8-600 MHz, 600 W CW, 50 V Lateral N-Channel Broadband RF Power MOSFETs

These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications.

MRFE6VP5300NR1, MRFE6VP5300GNR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

MRFE6VP5300N and MRFE6VP5300GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio

MRFE6VP5150NR1, MRFE6VP5150GNR1 1.8-600 MHz, 150 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

MRFE6VP5150N and MRFE6VP5150GN are high ruggedness devices that are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio

MRFE6VP100HR5, MRFE6VP100HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz.

MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.