MRF8S7235NR3 728-768 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S7170NR3 618-803 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET - Data Sheet

Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S7120NR3 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S21200HR6, MRF8S21200HSR6 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S18260HR6, MRF8S18260HSR6 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8S18210WHSR3, MRF8S18210WGHSR3 1805 MHz - 1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1805 MHz to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P9300HR6, MRF8P9300HSR6 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P9210NR3 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor

Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P9040NR1, MRF8P9040GNR1, MRF8P9040NBR1 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for CDMA, W-CDMA and LTE base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P8300HR6, MRF8P8300HSR6 750-820 MHz, 96 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

The MRF8P8300H is designed for W-CDMA and LTE base station applications with frequencies from 750 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulatioin