MRF8P29300HR6, MRF8P29300HSR6 2700-2900 MHz, 320 W, 30 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.

MRF8P26080HR3, MRF8P26080HSR3 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P23080HR3, MRF8P23080HSR3 2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P20165WHR3, MRF8P20165WHSR3 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.

MRF8P20161HSR3 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P20160HR3, MRF8P20160HSR3 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

The MRF8P20140WH, MRF8P20140WHS and MRF8P20140WGHS are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular

MRF8HP21080HR3, MRF8HP21080HSR3 2110-2170 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF7S24250N 250 W CW, 2400-2500 MHz, 32 V Data Sheet

MRF7S24250N 250 W CW over 2400-2500 MHz, 32 V RF power LDMOS transistor for industrial, scientific, medical (ISM) and industrial heating applications

MRF7S21150HR3, MRF7S21150HSR3 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.