MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S21080HR3, MRF7S21080HSR3 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S19170HR3, MRF7S19170HSR3 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S19120NR1 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7P20040HR3, MRF7P20040HSR3 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF6VP3450HR6, MRF6VP3450HR5, MRF6VP3450HSR6, MRF6VP3450HSR5 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

MRF6VP3091NR1, MRF6VP3091NR5, MRF6VP3091NBR1, MRF6VP3091NBR5 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

Designed for commercial and industrial broadband applications with frequencies from 470 to 1215 MHz. Devices are suitable for use in broadcast applications.

MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

MRF6VP11KHR6, MRF6VP11KGSR5 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband - Data Sheet

MRF6VP11KH and MRF6VP11KGS are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific