MRF6S27015NR1, MRF6S27015GNR1 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz.

MRF6S20010NR1, MRF6S20010GNR1 1600-2200 MHz, 10 W, 28 V GSM, GSM EDGE Single N-CDMA 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose

MRF6S19140HR3, MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL

MRF6P24190HR6 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET

Designed primarily for large-signal output applications at 2450 MHz.

MRFIC0954 Data Sheet: 800 MHz CDMA Upmixer/Exciter

800 MHz CDMA Upmixer/Exciter

MRFG35030R5 3550 MHz, 30 W, 12 V, Single W-CDMA Power FET GaAs PHEMT

Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in Class AB applications.

MRFG35010ANT1 500-5000 MHz, 9 W, 12 V Power FET GaAs pHEMT - Data Sheet

MRFG35010AN is designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB customer premise equipment (CPE

MRFG35010AR1 3.5 GHz, 10 W, 12 V Power FET GaAs PHEMT

Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station

MRFE6S9160HR3, MRFE6S9160HSR3 880 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.