Главная » Материалы за 13.02.2020 » Страница 262
Автор: Tonich от 13-02-2020, 16:48

MDE6IC9120NR1, MDE6IC9120GNR1 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MDE6IC9120N/GN wideband integrated circuit is designed with on-chip matching that makes it usable from 920 to 960 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers

Автор: Tonich от 13-02-2020, 16:48

MD8IC970NR1, MD8IC970GNR1 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers

The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz.

Автор: Tonich от 13-02-2020, 16:48

MD8IC925N 728-960 MHz, 2.5 W Avg., 28 V Data Sheet

The MD8IC925N wideband integrated circuit is designed with on-chip matching that makes it usable from 728 to 960 MHz. This multi-stage structure is rated for 24 to 32 volt operation and covers

Автор: Tonich от 13-02-2020, 16:48

MD7P19130HR3, MD7P19130HSR3 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.

Автор: Tonich от 13-02-2020, 16:48

MD7IC2755NR1, MD7IC2755GNR1 2500-2700 MHz, 10 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers

The MD7IC2755N wideband integrated circuit is designed with on-chip matching that makes it usable from 2500-2700 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers

Автор: Tonich от 13-02-2020, 16:48

MD7IC2251NR1, MD7IC2251GNR1 2110-2170 MHz, 12 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 to 2170 MHz.

Автор: Tonich от 13-02-2020, 16:48

MD7IC2250NR1, MD7IC2250GNR1, MD7IC2250NBR1 2110-2170 MHz, 5.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MD7IC2250N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers

Автор: Tonich от 13-02-2020, 16:48

MD7IC2050NR1, MD7IC2050GNR1, MD7IC2050NBR1 1880-2100 MHz, 10 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers

The MD7IC2050N wideband integrated circuit is designed with on-chip matching that makes it usable from 1750-2050 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers

Автор: Tonich от 13-02-2020, 16:48

MD7IC2012NR1, MD7IC2012GNR1 1805-2170 MHz, 1.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Data Sheet

The MD7IC2012N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage structure is rated for 24 to 32 volt operation and covers

Автор: Tonich от 13-02-2020, 16:48

MD7IC1812N, MD7IC1812GN 1805–2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers Data Sheet

MD7IC1812N 1.3 W wideband IC designed with on-chip matching, usable from 1805 to 2170 MHz covering all typical cellular base station modulation formats