MRFE6VP100HR5, MRFE6VP100HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz.
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MRFE6VP100HR5, MRFE6VP100HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors
RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz.
MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRFE6S9060NR1 880 MHz, 14 W Avg., 28 V, Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-source
MRFE6S9046NR1, MRFE6S9046GNR1 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRFE6S9045NR1 880 MHz, 10 W Avg., 28 V Single N-CDMA, Lateral N-Channel Broadband RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet
350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. Narrowband pulse capability.
MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz.
MRF8S9232NR3 865-960 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S9220HR3, MRF8S9220HSR3 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF8S9200NR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.