MRF7S24250N 250 W CW, 2400-2500 MHz, 32 V Data Sheet

MRF7S24250N 250 W CW over 2400-2500 MHz, 32 V RF power LDMOS transistor for industrial, scientific, medical (ISM) and industrial heating applications

MRF7S21150HR3, MRF7S21150HSR3 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S21080HR3, MRF7S21080HSR3 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S19170HR3, MRF7S19170HSR3 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S19120NR1 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7P20040HR3, MRF7P20040HSR3 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF6VP3450HR6, MRF6VP3450HR5, MRF6VP3450HSR6, MRF6VP3450HSR5 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

MRF6VP3091NR1, MRF6VP3091NR5, MRF6VP3091NBR1, MRF6VP3091NBR5 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

Designed for commercial and industrial broadband applications with frequencies from 470 to 1215 MHz. Devices are suitable for use in broadcast applications.