MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

MRF6VP11KHR6, MRF6VP11KGSR5 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband - Data Sheet

MRF6VP11KH and MRF6VP11KGS are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific

MRF6V4300NR1, MRF6V4300NBR1, 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs

Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz.

MRF6V3090NR1, MRF6V3090NR5, MRF6V3090NBR1, MRF6V3090NBR5 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors

Designed for commercial and industrial broadband applications with frequencies from 470 to 1215 MHz. Devices are suitable for use in broadcast applications.

MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs

Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.

MRF6V2010N 10 W over 10-450 MHz, 50 V Data Sheet

Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.

MRF6V14300HR3, MRF6V14300HSR3 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. Thes devices are suitable for use in pulsed applications.

MRF6V13250HR3, MRF6V13250HSR3 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs

RF Power transistors designed for CW and pulsed applications operating at 1300 MHz. These devices are suitable for use in CW and pulsed applications.

MRF6V12500H 500 W, 960-1215 MHz, 50 V RF Power Transistor Data Sheet

RF power transistors designed for applications operating at frequencies between 960 and 1215 MHz. Suitable for use in pulsed applications.

MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs

RF Power transistor designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulsed applications.