MRF1K50H 1500 W CW, 1.8-500 MHz, 50 V Data Sheet

MRF1K50H 1500 W CW over 1.8-500 MHz, 50 V RF power transistor designed for use in high VSWR industrial, scientific and medical applications

MRF1570NT1, MRF1570NFT1, 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz.

MRF1550NT1, MRF1550FNT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 175 MHz.

MRF1535NT1, MRF1535FNT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 520 MHz.

MRF1518NT1 520 MHz, 8 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz.

MRF1517NT1 520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications at frequencies to 520 MHz.

MRF1513NT1 520 MHz, 3 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications with frequencies to 520 MHz.

MRF1511NT1 175 MHz, 8 W, 7.5 V, Lateral N-Channel Broadband RF Power MOSFET

Designed for broadband commercial and industrial applications at frequencies to 175 MHz.

MRF085H 85 W CW, 1.8-1215 MHz, 50 V Data Sheet

MRF085H designed for use in high VSWR radio communications and ISM applications as well as radio and VHF TV broadcast and aerospace applications

MPXV7025, Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated - Data Sheet

The MPXV7025 series piezoresistive transducer is a state-of-the-art monolithic silicon pressure sensor designed for a wide range of applications, but particularly those employing a microcontroller