MRF9002NR2 1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source

MMG5004NR2 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN Power Amplifier InGaP HBT - Archived

Designed for 802.11a applications with frequencies from 4900 to 5900 MHz.

MHW8205R 860 MHz, 20 dB, 128-Channel High Output Mirror Power Doubler CATV Amplifier - Archived

20.2 dB Gain, 860 MHz, 128-Channel CATV Amplifier

MHW8185R 860 MHz, 18 dB, 128-Channel High Output Mirror Power Doubler CATV Amplifier - Archived

19.4 dB Gain, 860 MHz, 128-Channel CATV Amplifier

MRF6522-5R1 960 MHz, 5.0 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522-5R1 has been specifically designed for use in Communications Network (GSM) base stations.

MRF6522-10R1 960 MHz, 10 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for Class AAB common source, linear power amplifiers in the 960 MHz range. The MRF6522-10R1 has been specifically designed for use in Communications Network (GSM) base stations.

MRF21180R6 2110-2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21120R6 2110-2170 MHz, 120 W, 28 V Lateral N-Channel RF Power MOSFET - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21030LR3, MRF21030LSR3 2200 MHz, 30 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF19125R3 1930-1990 MHz, 125 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.