MMRF1310HR5, MMRF1310HSR5 1.8-600 MHz, 300 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet

The MMRF1310HR5 and MMRF1310HSR5 are high ruggedness devices and are designed for use in high VSWR military, industrial (including laser and plasma exciters), broadcast (analog and digital

MMRF1308HR5, MMRF1308HSR5 1.8-600 MHz, 600 W CW, 50 V Broadband RF Power MOSFETs - Data Sheet

The MMRF1308HR5 and MMRF1308HSR5 are high ruggedness devices and are designed for use in high VSWR military, aerospace and defense, industrial (including laser and plasma exciters), broadcast (analog

MMRF1306HR5, MMRF1306HSR5 1.8-600 MHz, 1250 W CW, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

These high ruggedness devices, MMRF1306HR5 and MMRF1306HSR5, are designed for use in high VSWR CW or pulse applications, such as HF, VHF, and low-band UHF radar and high power radio communications.

MMRF1305HR5, MMRF1305HSR5 1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet

The MMRF1305HR5 and MMRF1305HSR5 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military and radio

MMRF1304NR1, MMRF1304GNR1 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors - Data Sheet

The MMRF1304NR1 and MMRF1304GNR1 are RF power transistors suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio

MMRF1304LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet

The MMRF1304LR5 is an RF power transistor suitable for both narrowband and broadband CW or pulse applications operating at frequencies from 1.8 to 2000 MHz, such as military radio communications

MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V Data Sheet

MMRF1024HS 2496-2690 MHz, 50 W Avg, 28 V RF power LDMOS transistor for commercial and defense communications and electronic warfare applications

MMRF1023HS 2300-2400 MHz, 66 W Avg, 28 V Data Sheet

MMRF1023HS 2300-2400 MHz, 66 W Avg, 28 V RF power LDMOS transistor for commercial and defense communications and electronic warfare applications

MMRF1022HS 2110-2170 MHz, 63 W Avg, 28 V Data Sheet

MMRF1022HS 2110-2170 MHz, 63 W Avg, 28 V RF power LDMOS transistor for commercial and defense communications and electronic warfare applications

MMRF1020-04NR3, MMRF1020-04GNR3 720-960 MHz, 100 W Avg., 48 V RF Power LDMOS Transistors - Data Sheet

The MMRF1020-04NR3 and MMRF1020-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.