MMRF1018NR1, MMR1018NBR1 470-860 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors - Data Sheet

The MMRF1018NR1 and MMRF1018NBR1 are 90 W RF power LDMOS transistors and are designed for wideband RF power amplifiers covering the frequency range of 470 to 860 MHz.

MMRF1017NR3 720-960 MHz, 80 W Avg., 28 V Airfast^В® RF Power LDMOS Transistor - Data Sheet

MMRF1017NR3 is an 80 W RF power LDMOS transistor designed for wideband RF power amplifiers covering the frequency range of 720 to 960 MHz.

MMRF1016HR5 2-500 MHz, 600 W, 50 V Broadband RF Power MOSFET - Data Sheet

The MMRF1016HR5 is a 600 W RF power LDMOS transistor and is designed primarily for wideband RF power amplifiers with frequencies up to 500 MHz. This device is unmatched and is suitable for use

MMRF1015NR1, MMRF1015GNR1 1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs - Data Sheet

The MMRF1015NR1 and MMRF1015GNR1 are designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier

MMRF1014NT1 1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET - Data Sheet

The MMRF1014NT1 is designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs - Data Sheet

MMRF1013HR5 and MMRF1013HSR5 are RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.

MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet

The MMRF1012NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in aerospace and defense

MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs - Data Sheet

The MMRF1011HR5 and MMRF1011HSR5 RF power transistors are designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use

MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet

The MMRF1009HR5 and MMRF1009HSR5 are RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse

MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet

MMRF1008H, MMRF1008HS, MMRF1008GH 275 W pulse, 900-1215 MHz, RF power LDMOS transistor for defense and commercial pulse applications, such as IFF and DME.