MRF282SR1, MRF282ZR1 2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

MRF21125R3, MRF21125SR3 2110-2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21090R3, MRF21090SR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF21085LR3, MRF21085LSR3 2110-2170 MHz, 90 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF21060LR3, MRF21060LSR3 2110-2170 MHz, 60 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

MRF19085LR3, MRF19085LSR3 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF19060LR3, MRF19060LSR3 1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications.

MRF19045LR3, MRF19045LSR3 1930-1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF184R1, MRF184SR1 1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source

MRf183R1, MRF183LSR1 1.0 GHz, 45 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source