MRF182R1, MRF182SR1 1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

1.0 GHz, 30 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

MRF18090BR3, MRF18090BSR3 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETS - Archived

Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE

MRF18060BLR3, MRF18060BLSR3, 1930-1990 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN/PCS

MRF18060ALR3, MRF18060ALSR3 1805-1880 MHz, 60 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS

MRF1570T1, MRF1570FT1, 470 MHz, 70 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF1550T1, MRF1550FT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large signal, common-source

MRF1535T1, MRF1535FT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MW6S010MR1, MW6S010GMR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

The MW6S010MR1 and MW6S010GMR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier

MW4IC001MR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived

MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses NXP’s newest High Voltage (26 to 28 Volts) LDMOS IC technology

MHVIC2115R2 2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.