Silicon PIN diode
BAP1321-03 DATA SHEET Product specification Supersedes data of 2001 May 11 2004 Feb 17 DISCRETE SEMICONDUCTORS BAP1321-03 Silicon PIN diode NXP Semiconductors Product specification
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Silicon PIN diode
BAP1321-03 DATA SHEET Product specification Supersedes data of 2001 May 11 2004 Feb 17 DISCRETE SEMICONDUCTORS BAP1321-03 Silicon PIN diode NXP Semiconductors Product specification
Band-switching diode
BA891 IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
AFV141KH 1000 W Peak, 1200-1400 MHz, 50 V Data Sheet
AFV141KH 1000 W Peak over 1200-1400 MHz, 50 V RF power LDMOS transistor for pulse applications such as commercial L-Band radar systems
AFV121KH 1000 W Peak, 960-1215 MHz, 50 V Data Sheet
AFV121KH 1000 W Peak over 960-1215 MHz, 50 V RF power LDMOS transistors for pulse applications such as DME, secondary radars and transponders
AFV09P350-04NR3, AFV09P350-04GNR3 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors – Data Sheet
The AFV09P350-04NR3 and AFV09P350-04GNR3 100 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 720 to 960 MHz.
AFT31150N 150 W Pulse, 2700-3100 MHz, 32 V Data Sheet
AFT31150N 150 W Pulse over 2700-3100 MHz, 32 V AirfastВ® RF power LDMOS transistor for S-Band radars.
AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Data Sheet
AFT27S012N 728-2700 MHz, 1.26 W Avg, 28 V Airfast В®, RF power LDMOS transistor for cellular base stations
AFT27S010NT1 728-3600 MHz, 1.26 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor Data Sheet
The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
AFT26P100-4WSR3, AFT26P100-4WGSR3 2496-2690 MHz, 22 W Avg., 28 V AirfastВ® RF Power LDMOS Transistors Data Sheet
22 watt symmetrical Doherty RF power LDMOS transistor requiring very wide instantaneous bandwidth capability covering 2496 to 2690 MHz frequency range
AFT26HW050SR3, AFT26HW050GSR3, AFT26H050W26SR3 2496-2690 MHz, 9 W Avg., 28 V AirfastВ® RF Power LDMOS Transistors - Data Sheet
The AFT26HW050SR3, AFT26HW050GSR3 and AFT26H050W26SR3 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous