ARCHIVED 2006 - MC68HC11P2AD Data Sheet

MC68HC11P2AD data sheet

MW4IC2020MBR1, MW4IC2020GMBR1 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA, RF LDMOS Wideband Integrated Power Amplifiers - Archived

The MW4IC2020 wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers

MRF6S9060NR1, MRF6S9060NBR1 880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRF6S9060MR1, MRF6S9060MBR1 880 MHz, 14 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance make these devices ideal for large-signal, common-source

MRF6S9045NR1, MRF6S9045NBR1 880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRF6S9045MR1, MRF6S9045MBR1 880 MHz, 10 W Avg., 28 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRF6S19120HR3, MRF6S19120HSR3 1930-1990 MHz, 19 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs - Archived

Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF5S21150R3, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF5S21130R3, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.