A2T21H100-25S 2110–2170 MHz, 18 W Avg., 28 V Airfast^® RF Power LDMOS Transistor Data Sheet

18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz

A2T20H330W24S 1880-2025 MHz, 58 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors Data Sheet

58 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering the frequency range of 1880 to 2025 MHz.

A2T20H330W24N 1880-2025 MHz, 55 W Avg, 28 V Data Sheet

A2T20H330W24N 1880-2025 MHz, 55 W Avg, 28 V AirfastВ®, RF power LDMOS transistor for cellular base stations

A2T20H160W04N 1880-2025 MHz, 28 W Avg, 28 V Data Sheet

A2T20H160W04N 1880-2025 MHz, 28 W Avg, 28 V AirfastВ®, RF power LDMOS transistor for cellular base stations

A2T18S262W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet

A2T18S262W12N 1805-1880 MHz, 56 W Avg., 28 V Airfast ^В® RF power LDMOS transistor for cellular base stations

A2T18S261W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet

A2T18S261W12N 1805-1880 MHz, 56 W Avg., 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T18S260W12N 1805-1880 MHz, 56 W Avg, 28 V Data Sheet

A2T18S260W12N 1805-1880 MHz, 56 W Avg., 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2T18S260-12S 1805-1995 MHz, 50 W Avg, 28 V Data Sheet

A2T18S260-12S 1805-1995 MHz, 50 W Avg., 28 V AirfastВ® RF power LDMOS transistor for cellular base stations

A2T18S165-12S 1805-1995 MHz, 38 W Avg, 28 V Data Sheet

A2T18S165-12S 1805-1995 MHz, 38 W Avg., 28 V AirfastВ® RF power LDMOS transistor for cellular base stations

A2T18S162W31S, A2T18S162W31GS 1805-1880 MHz, 32 W Avg., 28 V Airfast^В® RF Power LDMOS Transistors Data Sheet

A2T18S162W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1880 MHz bands