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A2T18S160W31S, A2T18S160W31GS 1805-1995 MHz, 32 W Avg., 28 V AirfastВ® RF Power LDMOS Transistors Data Sheet
A2T18S160W31 32 W RF power LDMOS transistors for cellular base station applications requiring very wide instantaneous bandwidth in the 1805-1995 MHz bands
A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V Data Sheet
A2T18H455W23N 1805-1880 MHz, 87 W Avg, 31.5 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T18H450W19S 1805-1880 MHz, 89 W Avg, 30 V Data Sheet
A2T18H450W19S 1805-1880 MHz, 89 W Avg, 30 V AirfastВ®, RF power LDMOS transistor for cellular base stations
A2T18H410-24S 1805-1880 MHz, 71 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor Data Sheet
A2T18H410-24S 71 W asymmetrical Doherty RF power LDMOS transistor for cellular base station applications covering the 1805 to 1880 MHz band.
A2T18H160-24S 1805-1880 MHz, 28 W Avg, 28 V Data Sheet
A2T18H160-24S 1805-1880 MHz, 28 W Avg, 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T18H100-25SR3 1805-1995 MHz, 18 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor Data Sheet
A2T18H100-25S 18 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station applications covering frequencies from 1805 to 1995 MHz.
A2T14H450-23N 1452-1511 MHz, 93 W Avg, 31 V Data Sheet
A2T14H450-23N 1452-1511 MHz, 93 W Avg, 31 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T09VD300N 716-960 MHz, 79 W Avg, 48 V Data Sheet
A2T09VD300N 716-960 MHz, 79 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T09VD250N 716-960 MHz, 65 W Avg, 48 V Data Sheet
A2T09VD250N 716-960 MHz, 65 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations
A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet
A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
