MRF9085LR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
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MRF9085LR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRF5S9150HSR3 880 MHz, 33 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for N -CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S19130HR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF21010LSR1 2110-2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFET
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF19030LR3 1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
MRF19030LSR3 1930-1990 MHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.