Temperature monitor for microprocessor systems
NE1617A 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature
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Temperature monitor for microprocessor systems
NE1617A 1. General description The NE1617A is an accurate two-channel temperature monitor. It measures the temperature of itself and the temperature
Low voltage comparator; open-drain output
NCX2222 1. General description The NCX2222 provides a dual, low voltage, low-power comparator with open-drain outputs. The NCX2222 has a very low supply
MW7IC3825NR1, MW7IC3825GNR1, MW7IC3825NBR1, 3400-3600 MHz, 5 W AVG., 28 V WiMAX, RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400-3600 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers
MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz.
MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW RF LDMOS Integrated Power Amplifier
The MW6IC2420NB integrated circuit is designed with on-chip matching that makes it usable at 2450 MHz.
MW6IC2240NBR1, MW6IC2240GNBR1 2110-2170 MHz, 4.5 W Avg., 28 V, 2 x W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 to 2170 MHz.
MW6IC2015NBR1, MW6IC2015GNBR1 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers
The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses NXPВ®. newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi
MW5IC2030NBR1, MW5IC2030GNBR1 1930-1990 MHz, 30 W, 26 V, GSM/GSM EDGE, W-CDMA, PHS, RF LDMOS Wideband Integrated Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on-chip matching that makes it usable from 1930 to 1990 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers
MW4IC915NBR1, MW4IC915GNBR1 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers
MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses NXPВ®. newest High Voltage (26 to 28 Volts) LDMOS IC technology
MW4IC2230NBR1, MW4IC2230GNBR1 2110-2170 MHz, 30 W, 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed with on-chip matching that makes it usable from 1600 to 2400 MHz. This multi-stage structure is rated for 26 to 28 Volt operation and covers