MRFIC0916 Data Sheet: 100 to 2500 MHz General Purpose RF Cascode Amplifier

General Purpose RF Cascode Amplifier

MRFG35020AR1 3.5 GHz, 20 W, 12 V WiMAX Power FET GaAs PHEMT

Designed for WiMAX and WLL base statioin applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range.

MRFG35005ANT1, 3.5 GHz, 4.5 W, 12 V Power FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS applications with frequencies from 500 to 5000 MHz.

MRFG35003ANT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz.

MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V Power FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz.

MRFE6S9205HR3, MRFE6S9205HSR3 880 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRFE6S9201HR3, MRFE6S9201HSR3 880 MHz, 40 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MRFE6S9200HR3, MRFE6S9200HSR3 880 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRFE6S9135HR3, MRFE6S9135HSR3 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.

MRFE6S9130HR3, MRFE6S9130HSR3 880 MHz, 27 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs

Designed for N-CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.