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Автор: Tonich от 13-02-2020, 16:48

A2T09D400-23N 716-960 MHz, 93 W Avg, 28 V Data Sheet

A2T09D400-23N 716-960 MHz, 93 W Avg., 28 V AirfastВ® RF power LDMOS transistor for cellular base stations

Автор: Tonich от 13-02-2020, 16:48

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V Data Sheet

A2T08VD020N 728-960 MHz, 2 W Avg, 48 V AirfastВ® RF power LDMOS transistor for cellular base stations

Автор: Tonich от 13-02-2020, 16:48

A2T07H310-24SR6 716–960 MHz, 47 W AVG., 28 V Airfast® RF Power LDMOS Transistor - Data Sheet

47 W asymmetrical Doherty RF power LDMOS transistor for cellular base station applications covering frequency range of 716 to 960 MHz.

Автор: Tonich от 13-02-2020, 16:48

A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor - Data Sheet

The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency

Автор: Tonich от 13-02-2020, 16:48

A2I35H060N 3400-3800 MHz, 10 W Avg, 28 V Data Sheet

A2I35H060N 3400-3800 MHz, 10 W Avg., 28 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations

Автор: Tonich от 13-02-2020, 16:48

A2I25H060N 2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet

A2I25H060N 2300-2690 MHz, 10.5 W Avg., 28 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations

Автор: Tonich от 13-02-2020, 16:48

A2I25D025N 2100-2900 MHz, 3.2 W Avg., 28 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifier Data Sheet

A2I25D025N wideband integrated circuit designed with on-chip matching optimized to function with a single multi-band circuit usable from 2100 to 2900 MHz

Автор: Tonich от 13-02-2020, 16:48

A2I25D012NR1, A2I25D012GNR1 2300-2690 MHz, 2.2 W Avg., 28 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifiers - Data Sheet

The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz.

Автор: Tonich от 13-02-2020, 16:48

A2I22D050NR1, A2I22D050GNR1 1800-2200 MHz, 5.3 W Avg., 28 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifiers Data Sheet

The A2I22D050N wideband integrated circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz.

Автор: Tonich от 13-02-2020, 16:48

A2I20H080N 1800-2200 MHz, 13.5 W Avg, 30 V Data Sheet

A2I20H060N 1800-2200 MHz, 13.5 W Avg., 30 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations