A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet

A2I20H060N 1800-2200 MHz, 12 W Avg., 28 V Airfast^В® wideband integrated RFIC power amplifier for cellular base stations

A2I20D040N 1400-2200 MHz, 5 W Avg, 28 V Data Sheet

A2I20D040N 1400-2200 MHz, 5 W Avg, 28 V Airfast^В® RF power LDMOS amplifier for cellular base stations

A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet

A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Airfast^В® RF power LDMOS amplifier for cellular base stations Data Sheet 636 KB

A2I09VD030N 575-960 MHz, 4 W Avg, 48 V Data Sheet

A2I09VD030N 575-960 MHz, 4 W Avg, 48 V Airfast^В® wideband integrated RFIC power amplifier for cellular base stations

A2I08H040N 728-960 MHz, 9 W Avg, 28 V Data Sheet

A2I08H040N 728-960 MHz, 9 W Avg, 28 V Airfast^В® RF power LDMOS transistor for cellular base stations

A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V GaN Data Sheet

A2G35S200-01S 3400-3600 MHz, 30 W Avg, 48 V Airfast^В® RF power GaN transistor for cellular base stations

A2G35S160-01S 3400-3600 MHz, 32 W Avg, 48 V GaN Data Sheet

A2G35S160-01S 3400-3600 MHz, 32 W Avg, 48 V Airfast^В® RF power GaN transistor for cellular base stations

A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V GaN Data Sheet

A2G26H281-04S 2496-2690 MHz, 50 W Avg, 48 V Airfast RF power GaN transistor for cellular base stations

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V GaN Data Sheet

A2G22S251-01S 1805-2200 MHz, 48 W Avg, 48 V Airfast^В® RF power GaN transistor for cellular base stations

A2G22S160-01S 1800–2200 MHz, 32 W AVG., 48 V Airfast^® RF Power GaN Transistor Data Sheet

NXP^В® 32 W RF power GaN transistor designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz.