MHL18336 1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier - Archived

Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.

ARCHIVED 2005 - MCM63D736A 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM

Data sheet for MCM63D736A 128K x 36 Synch Dual I/O, Dual Address SRAM

ARCHIVED - MC14568, Low-Power CMOS Ionization Smoke Detector IC with Temporal Pattern Horn Driver

The MC14568, when used with an ionization chamber and a small number of external components, will detect smoke.

ARCHIVED - MC145018, Low-Power CMOS Ionization Smoke Detector IC with Interconnect and Temporal Horn Driver

The MC145018, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded via an external piezoelectric transducer

ARCHIVED - MC145017, Low-Power CMOS Ionization Smoke Detector IC with Temporal Pattern Horn Driver

The MC145017, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded via an external piezoelectric transducer

ARCHIVED 2005 - MC13143 Data Sheet: Ultra Low Power DC - 2.4 GHz Linear Mixer

Archived 2005 Ultra Low Power DC - 2.4GHz Linear Mixer

MRF9582NT1 849 MHz, 38 dBm, 12.5 V High Frequency Power Transistor LDMOS FET - Archived

Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

MRF9210R3 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common

MRF9180R6 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common

MRF9120LR3 880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common