MRF1535T1, MRF1535FT1, 520 MHz, 35 W, 12.5 V, Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source

MW6S010MR1, MW6S010GMR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

The MW6S010MR1 and MW6S010GMR1 are designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier

MW4IC001MR4 800-2170 MHz, 900 mW, 28 V W-CDMA RF LDMOS Wideband Integrated Power Amplifiers - Archived

MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses NXP’s newest High Voltage (26 to 28 Volts) LDMOS IC technology

MHVIC2115R2 2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

MHVIC2115R2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.

MHVIC2115NR2 2170 MHz, 26 V, 23/34 dBm W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

MHVIC2115NR2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.

MHVIC2114R2 2100 MHz, 27 V, 23 dBm, Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Archived

The MHVIC2114R2 wideband integrated circuit is designed for base station applications. It uses Our newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.

MRF5S19150, MRF5S19150R3, MRF5S19150S, MRF5S19150SR3 1990 MHz, 32 W, 28 V Lateral N-Channel RF Power MOSFETs - Archived

Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

MRF373R1, MRF373SR1 470-860 MHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common

MRF281SR1, MRF281ZR1 1930-1990 MHz, 4 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs - Archived

Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial