MPC106 Bridge/Memory Controller Part Number Specifications for Extended Temperatures
MPC106 Bridge/Memory Controller Part Number Specifications for Extended Temperatures
MPC105EC Hardware Specifications PCI Bridge/Memory Controller
MPC105 PCI Bridge/Memory Controller Hardware Specifications
MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF9135LR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF9085LR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.
MRF9060LR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRF9060LSR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz.
MRF5S9150HSR3 880 MHz, 33 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
Designed for N -CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFET
Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.