A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet
A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V AirfastВ® RF power LDMOS amplifier for cellular base stations
A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet
A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V AirfastВ® RF power LDMOS amplifier for cellular base stations
A2I20D040N 1400-2200 MHz, 5 W Avg, 28 V Data Sheet
A2I20D040N 1400-2200 MHz, 5 W Avg, 28 V AirfastВ® RF power LDMOS amplifier for cellular base stations
A2I20H060N 1800-2200 MHz, 12 W Avg, 28 V Data Sheet
A2I20H060N 1800-2200 MHz, 12 W Avg., 28 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations
A2I20H080N 1800-2200 MHz, 13.5 W Avg, 30 V Data Sheet
A2I20H060N 1800-2200 MHz, 13.5 W Avg., 30 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations
A2I22D050NR1, A2I22D050GNR1 1800-2200 MHz, 5.3 W Avg., 28 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifiers Data Sheet
The A2I22D050N wideband integrated circuit is designed with on-chip matching that makes it usable from 1800 to 2200 MHz.
A2I25D012NR1, A2I25D012GNR1 2300-2690 MHz, 2.2 W Avg., 28 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifiers - Data Sheet
The A2I25D012N wideband integrated power amplifier is optimized to function with a single multi-band circuit usable from 2300 to 2690 MHz.
A2I25D025N 2100-2900 MHz, 3.2 W Avg., 28 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifier Data Sheet
A2I25D025N wideband integrated circuit designed with on-chip matching optimized to function with a single multi-band circuit usable from 2100 to 2900 MHz
A2I25H060N 2300-2690 MHz, 10.5 W Avg, 28 V Data Sheet
A2I25H060N 2300-2690 MHz, 10.5 W Avg., 28 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations
A2I35H060N 3400-3800 MHz, 10 W Avg, 28 V Data Sheet
A2I35H060N 3400-3800 MHz, 10 W Avg., 28 V AirfastВ® wideband integrated RFIC power amplifier for cellular base stations
A2T07D160W04SR3 716-960 MHz, 30 W Avg., 28 V AirfastВ® RF Power LDMOS Transistor - Data Sheet
The A2T07D160W04SR3 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency