A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet
A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V AirfastВ® RF power LDMOS transistor for cellular base stations
A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V Data Sheet
A3T18H455W23S 1805-1880 MHz, 87 W Avg, 30 V AirfastВ® RF power LDMOS transistor for cellular base stations
A3T21H360W23S 2110-2200 MHz, 56 W Avg, 28 V Data Sheet
A3T21H360W23S 2110-2200 MHz, 56 W Avg, 28 V AirfastВ® RF power LDMOS transistor for cellular base stations
A3T21H450W23S 2110-2200 MHz, 87 W Avg, 30 V Data Sheet
A3T21H450W23S 2110-2200 MHz, 87 W Avg, 30 V AirfastВ® RF power LDMOS transistor for cellular base stations
AFIC10275N, AFIC10275GN 978-1090 MHz, 250 W Peak, 50 V AirfastВ® RF LDMOS Wideband Integrated Power Amplifiers Data Sheet
Avionics 2-stage RFICs designed for transponder applications operating from 978 to 1090 MHz.
AFIC31025N 25 W Pulse over 2400-3100 MHz, 32 V Data Sheet
AFIC31025N 25 W Pulse over 2400-3100 MHz, 32 V AirfastВ® muti-stage device designed to support S-Band radar and 2450 MHz ISM applications.
AFIC901N 30 dBm, 1.8-1000 MHz, 7.5 V Data Sheet
AFIC901N 30 dBm over 1.8-1000 MHz, 7.5 V AirfastВ® RFIC power amplifier for use in a wide range of industrial, medical and communications applications.
AFT05MP075NR1, AFT05MP075GNR1 136-520 MHz, 70 W AVG., 12.5 V Broadband RF Power LDMOS Transistors - Data Sheet
AFT05MP075N and AFT05MP075GN are designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make
3 W CW, 1.8-941 MHz, 7.5 V AirfastВ® RF Power LDMOS Transistor Data Sheet
AFT05MS003N 3 W CW over 1.8-941 MHz, 7.5 V high gain, rugged RF power LDMOS transistor for handheld 2-way radio and machine to machine applications
AFT05MS004NT1 136-941 MHz, 4 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet
The AFT05MS004N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large
AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet
The AFT05MS006N is designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large