MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz.
MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC18100N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2050 MHz.
MW7IC3825NR1, MW7IC3825GNR1, MW7IC3825NBR1, 3400-3600 MHz, 5 W AVG., 28 V WiMAX, RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on-chip matching that makes it usable from 3400-3600 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers
Low voltage comparator; open-drain output
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Temperature monitor for microprocessor systems
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HECETA4 Temperature and voltage monitor
NE1619 NE1619 HECETA4 Temperature and voltage monitor Product data sheet Supersedes data of 2004 May 10 2004 Oct 05 INTEGRATED CIRCUITS
Matched dual high-performance low-voltage operational amplifier
NE/SA/AU5232 NE/SA/AU5232 Matched dual high-performance low-voltage operational amplifier Product data 2002 May 21
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NE57811 NE57811 Advanced DDR memory termination power with shutdown Product data Supersedes data of 2002 Jul 16 2003 Apr 02
DDR memory termination regulator with standby mode and enhanced efficiency
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Noise reduction class-D headphone driver amplifier
NE58633 1. General description The NE58633 is a stereo, noise reduction, class-D, Bridge-Tied Load (BTL) headphone driver amplifier. Each channel
80C51 8-bit microcontroller family 128/256 byte RAM ROMless low voltage (2.7 V-5.5 V), low power, high speed (33 MHz)
80C31/80C32 80C51 8-bit microcontroller family 128/256 byte