MHL9128 800-960 MHz, 1.3 W, 15 V, 20 dB, UHF Linear Amplifier - Archived
1.3 W, 30 dB, 800-960 MHz Linear Amplifier
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MHL9128 800-960 MHz, 1.3 W, 15 V, 20 dB, UHF Linear Amplifier - Archived
1.3 W, 30 dB, 800-960 MHz Linear Amplifier
MHL9236, MHL9236M 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifiers - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MRF19120 1990 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET - Archived
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular
MRF20060R, MRF20060RS 2 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistors - Archived
60 W, 2000 MHz RF Power Broadband NPN Bipolar
MRF6522-60 960 MHz, 60 W Lateral N-Channel Broadband RF Power MOSFET - Archived
Designed for broadband commercial and industrial applications at frequencies up to 1 GHz and specified for the GSM 925-960 MHz band.
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA18010N 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA19010N 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity and gain.
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier - Archived
Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain.