8-bit I2C-bus and SMBus, level translating, low voltage GPIO with reset and interrupt

PCA9574 1. General description The PCA9574 is a CMOS device that provides 8 bits of General Purpose parallel

Dual bidirectional bus buffer

PCA9600 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications

Dual bidirectional bus buffer

PCA9601 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications

MMMRF1006H 10-500 MHz, 1000 W, 50 V Data Sheet

MMRF1006H, MMRF1006HS 10-500 MHz, 1000 W, 50 V RF LDMOS power transistor for use in communications, radar and industrial applications

MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet

The MMRF1007HR5 and MMRF1007HSR5 are RF power transistors designed for applications operating at frequencies between 900 to 1215 MHz. These devices are suitable for use in defense and commercial

MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet

MMRF1008H, MMRF1008HS, MMRF1008GH 275 W pulse, 900-1215 MHz, RF power LDMOS transistor for defense and commercial pulse applications, such as IFF and DME.

MMRF1009HR5, MMRF1009HSR5 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs - Data Sheet

The MMRF1009HR5 and MMRF1009HSR5 are RF power transistors designed for applications operating at frequencies from 900 to 1215 MHz. These devices are suitable for use in defense and commercial pulse

MMRF1011HR5, MMRF1011HSR5 1400 MHz, 330 W, 50 V Pulse L-Band RF Power MOSFETs - Data Sheet

The MMRF1011HR5 and MMRF1011HSR5 RF power transistors are designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use

MMRF1012NR1 10-450 MHz, 10 W, 50 V Broadband RF Power MOSFET - Data Sheet

The MMRF1012NR1 is designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Device is unmatched and is suitable for use in aerospace and defense

MMRF1013HR5, MMRF1013HSR5 2700-2900 MHz, 320 W, 30 V Pulse S-Band RF Power MOSFETs - Data Sheet

MMRF1013HR5 and MMRF1013HSR5 are RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.