MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet
MMRF1318N is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz.
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MMRF1318NR1 10-600 MHz, 300 W, 50 V Broadband RF Power LDMOS Transistor Data Sheet
MMRF1318N is designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz.
1.8-600 MHz, 150 W CW, 50 V RF Power LDMOS Transistor Data Sheet
MMRF1320N, MMRF1320GN 1.8-600 MHz, 150 W CW, 50 V RF power LDMOS transistor for commercial radio communications and HF, VHF and UHF radar applications
MMRF2004NBR1 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifier - Data Sheet
The MMRF2004NBR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 2300 to 2700 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers
728-960 MHz, 3.2 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet
MMRF2005N, MMRF2005GN 728-960 MHz, 3.2 W Avg, 28 V RF LDMOS power amplifier for radio communications, data links and UHF radar applications
MMRF2006NT1 1805-2170 MHz, 20 W CW, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet
The MMRF2006NT1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage structure is rated for 26 to 32 V operation and can be used
136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet
MMRF2007N, MMRF2007GN 136-940 MHz, 35 W, 28 V RF LDMOS power amplifier for military & commercial VHF & UHF radio base station or radar driver applications
MMRF2010N 1030-1090 MHz, 250 W Peak, 50 V Data Sheet
MMRF2010N, MMRF2010GN 1030-1090 MHz, 250 W Peak, 50 V RF LDMOS power amplifier for IFF transponder applications
MMT20303H 50-4000 MHz, 3-Bit 1 dB LSB Data Sheet
MMT20303H 50-4000 MHz, 3-bit 1 dB LSB suitable for 3G/4G small cell transmitter and mobile radio applications
MMZ09312BT1 400-1000 MHz, 31.7 dB, 29.6 dBm InGaP HBT Linear Amplifier Data Sheet
The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell
130-1000 MHz, 30 dB, 33 dBm, InGaP HBT Linear Amplifier Data Sheet
MMZ09332B 130-1000 MHz, 33 dBm P1dB, high linearity amplifier designed for wireless broadband applications