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ARCHIVED - MC145018, Low-Power CMOS Ionization Smoke Detector IC with Interconnect and Temporal Horn Driver
The MC145018, when used with an ionization chamber and a small number of external components, will detect smoke. When smoke is sensed, an alarm is sounded via an external piezoelectric transducer
ARCHIVED - MC14568, Low-Power CMOS Ionization Smoke Detector IC with Temporal Pattern Horn Driver
The MC14568, when used with an ionization chamber and a small number of external components, will detect smoke.
ARCHIVED 2005 - MCM63D736A 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM
Data sheet for MCM63D736A 128K x 36 Synch Dual I/O, Dual Address SRAM
MHL18336 1800-1900 MHz, 4 W, 30 dB, RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL18336N 1800-1900 MHz, 4 W, 30 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL18926 1805-1880 MHz, 10 W, 28.6 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL18926N 1805-1880 MHz, 10 W, 28.6 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL19338 1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL19338N 1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL19338NN 1900-2000 MHz, 4.0 W, 30 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
