MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
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MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL19926N 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 Ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL19936 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL19936N 1900-2000 MHz, 12 W, 29 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336N 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336NN 2110-2170 MHz, 3.0 W, 31 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236MN 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236N 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL9236NN 800-960 MHz, 2.5 W, 30.5 dB RF Linear LDMOS Amplifier - Archived
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain.