MMG3H21NT1 0-6000 MHz, 19.3 dB, 20.5 dBm InGaP HBT GPA - Data Sheet

The MMG3H21NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small-signal, high linearity, general

MML09211HT1 400-1400 MHz, 21.3 dB, 22 dBm E-pHEMT LNA - Data Sheet

The MML09211H is a single-stage Low Noise Amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

MML09231HT1 700-1400 MHz, 17.2 dB, 24.5 dBm, 0.36 dB NF E-pHEMT LNA - Data Sheet

The MML09231H is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity

MML20211HT1 1400-2800 MHz, 18.6 dB, 21.3 dBm E-pHEMT LNA - Data Sheet

The MML20211H is a single-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

MML20242HT1 1400-2800 MHz, 34 dB, 24 dBm, 0.59 dB NF E-pHEMT LNA - Data Sheet

The MML20242H is a 2-stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications.

MML25231H 1000-4000 MHz LNA Data Sheet

1000-4000 MHz, 15.2 dB, 23 dBm P1dB, 0.36 NF Low Noise Amplifier

MMRF1004NR1, MMRF1004GNR1 1600-2200 MHz, 10 W, 28 V, GSM, GSM EDGE, Single N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

The MMRF1004NR1 and MMRF1004GNR1 are designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose

MMRF1005HR5, MMRF1005HSR5 1300 MHz, 250 W, 50 V Lateral N-Channel RF Power MOSFETs - Data Sheet

The MMRF1005HR5 and MMRF1005HSR5 are RF power transistors designed for CW and pulse applications operating at 1300 MHz. These devices are suitable for use in defense and commercial CW and pulse

MRF6P24190HR6 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET

Designed primarily for large-signal output applications at 2450 MHz.

MRF6P27160HR6 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL