MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs
Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.
MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs
Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz.
MRF6V3090NR1, MRF6V3090NR5, MRF6V3090NBR1, MRF6V3090NBR5 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors
Designed for commercial and industrial broadband applications with frequencies from 470 to 1215 MHz. Devices are suitable for use in broadcast applications.
MRF6V4300NR1, MRF6V4300NBR1, 10-600 MHz, 300 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs
Designed primarily for CW large-signal output and driver applications with frequencies up to 600 MHz.
MRF6VP11KHR6, MRF6VP11KGSR5 1.8-150 MHz, 1000 W, 50 V Lateral N-Channel Broadband - Data Sheet
MRF6VP11KH and MRF6VP11KGS are designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific
MRF6VP121KHR6, MRF6VP121KHSR6 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
MRF6VP3091NR1, MRF6VP3091NR5, MRF6VP3091NBR1, MRF6VP3091NBR5 470-1215 MHz, 90 W, 50 V Broadband RF Power LDMOS Transistors
Designed for commercial and industrial broadband applications with frequencies from 470 to 1215 MHz. Devices are suitable for use in broadcast applications.
MRF6VP3450HR6, MRF6VP3450HR5, MRF6VP3450HSR6, MRF6VP3450HSR5 860 MHz, 450 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
MRF7P20040HR3, MRF7P20040HSR3 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 1800 to 2200 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications.
MRF7S19120NR1 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.