MRF7S19170HR3, MRF7S19170HSR3 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S21080HR3, MRF7S21080HSR3 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S21110HR3, MRF7S21110HSR3 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S21150HR3, MRF7S21150HSR3 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications.

MRF7S24250N 250 W CW, 2400-2500 MHz, 32 V Data Sheet

MRF7S24250N 250 W CW over 2400-2500 MHz, 32 V RF power LDMOS transistor for industrial, scientific, medical (ISM) and industrial heating applications

MRF8HP21080HR3, MRF8HP21080HSR3 2110-2170 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P20140WHR3, MRF8P20140WHSR3, MRF8P20140WGHSR3 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs - Data Sheet

The MRF8P20140WH, MRF8P20140WHS and MRF8P20140WGHS are designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular

MRF8P20160HR3, MRF8P20160HSR3 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P20161HSR3 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

MRF8P20165WHR3, MRF8P20165WHSR3 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.