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Автор: Tonich от 13-02-2020, 16:48

MRF8S7120NR3 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S7170NR3 618-803 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET - Data Sheet

Designed for base station applications with frequencies from 618 to 803 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S7235NR3 728-768 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S9102NR3 865-960 MHz, 28 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S9120NR3 865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S9200NR3 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S9220HR3, MRF8S9220HSR3 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S9232NR3 865-960 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET

Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

Автор: Tonich от 13-02-2020, 16:48

MRF8S9260HR3, MRF8S9260HSR3 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz.

Автор: Tonich от 13-02-2020, 16:48

MRF8VP13350N 700-1300 MHz, 350 W CW, 50 V Data Sheet

350 W CW transistor designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. Narrowband pulse capability.