MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
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MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET
Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
The MW6S010N is designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
MW7IC008NT1 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet
The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz.
MW7IC2020NT1 1805-2170 MHz, 2.4 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier - Data Sheet
The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz.
MW7IC2040NR1, MW7IC2040GNR1, MW7IC2040NBR1 1930-1990 MHz, 1805-1880 MHz, 4 W Avg., 28 V Single W-CDMA, GSM EDGE, GSM RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz.
MW7IC2220NR1, MW7IC2220GNR1, MW7IC2220NBR1 2110-2170 MHz, 2 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
The MW7IC2220N wideband integrated circuit is designed with on-chip matching that makes it usable from 2000 to 2200 MHz.
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