MPX5999D Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated - Data sheet

The MPX5999D piezoresistive transducer is a state-of-the-art pressure sensor designed for a wide range of applications, but particularly for those employing a microcontroller or microprocessor

MPXxx6115A, 15 to 115 kPa, Absolute, Integrated Pressure Sensor - Data sheets

The MPXxx6115A series sensor integrates on-chip, bipolar op amp circuitry and thin film resistor networks to provide a high output signal and temperature compensation. The small form factor and high

MPxx5004, 0 to 3.92 kPa, Differential and Gauge, Integrated Pressure Sensor - Data sheet

NXP’s MPxx5004 series piezoresistive transducer is a state-of-the-artmonolithic silicon pressure sensor designed for a wide range of applications, butparticularly

MRF19090SR3 1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFET

Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

MRF21045LR3, MRF21045LSR3 2110-2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF284LR1 2000 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB

MRF373ALR1, MRF373ALSR1 470-860 MHz, 75 W, 32 V Lateral N-Channel Broadband RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.

MRF377HR3 470-860 MHz, 45 W, 32 V Lateral N-Channel RF Power MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common

MRF5P20180HR6 1930-1990 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET

Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular

MRF5P21045NR1 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET

Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.