N-channel dual gate MOSFET
BF1217WR 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes
N-channel dual gate MOSFET
BF1217WR 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes
Dual N-channel dual gate MOSFET
BF1216 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source
Dual N-channel dual gate MOSFET
BF1215 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead
Dual N-channel dual gate MOSFET
BF1214 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR DATA SHEET Product specification 2003 Nov 14 DISCRETE SEMICONDUCTORS BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs NXP Semiconductors
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR DATA SHEET Product specification 2003 Dec 16 DISCRETE SEMICONDUCTORS BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs NXP Semiconductors
Dual N-channel dual gate MOSFET
BF1210 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source
Dual N-channel dual gate MOSFET
BF1208D 1. Product profile 1.1 General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated
Dual N-channel dual gate MOSFET
BF1208 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated
Dual N-channel dual gate MOSFET
BF1207 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated