N-channel single gate MOSFET

BF1107 1. Product profile 1.1 General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities

N-channel dual-gate MOS-FETs

BF1105; BF1105R; BF1105WR DATA SHEET Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 DISCRETE SEMICONDUCTORS BF1105; BF1105R; BF1105WR N-channel dual

Dual N-channel dual gateMOS-FETs

BF1102; BF1102R Dual N-channel dual gate MOS-FETs DATA SHEET Product specification Supersedes data of 1999 Jul 01 2000 Apr 11 DISCRETE SEMICONDUCTORS BF1102; BF1102R Dual N-channel dual gate MOS-FETs

N-channel dual-gate MOS-FETs

BF1101; BF1101R; BF1101WR DATA SHEET Product specification Supersedes data of 1999 Feb 01 1999 May 14 DISCRETE SEMICONDUCTORS BF1101; BF1101R; BF1101WR N-channel dual

Dual-gate MOS-FETs

BF1100; BF1100R IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets

Dual-gate MOS-FET

BF1100WR DATA SHEET Product specification 1995 Apr 25 DISCRETE SEMICONDUCTORS BF1100WR Dual-gate MOS-FET NXP Semiconductors Product specification Dual-gate MOS-FET BF1100WR FEATURES

Low-voltage variable capacitance diode

BB202LX 1. Product profile 1.1 General description The BB202LX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD

Variable capacitance diode for VCO and VCXO

BB199 1. Product profile 1.1 General description The BB199 is a low voltage variable capacitance diode for the Voltage Controlled Oscillator (VCO

Variable capacitance diode for VCO and VCXO

BB198 1. Product profile 1.1 General description The BB198 is a low voltage variable capacitance diode for the Voltage Controlled Oscillator (VCO

UHF variable capacitance diode

BB189 1. Product profile 1.1 General description The BB189 is a planar technology variable capacitance diode in a SOD523 ultra small leadless plastic SMD package