MW7IC008NT1 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier - Data Sheet

The MW7IC008N wideband integrated circuit is designed with on-chip matching that makes it usable from 20 to 1000 MHz.

MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs

The MW6S010N is designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

MW6S004NT1 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET

Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

MSC8256 Six-Core Digital Signal Processor - Data Sheet

This MSC8256 data sheet includes the description, features, and specifications for this six-core digital signal processor.

MSC8156E Six-Core Digital Signal Processor with Security - Data Sheet

This MSC8156E data sheet includes the description, features, and specifications for this six-core signal processor with security.

MSC8156 Six-Core Digital Processor - Data Sheet

This MSC8156 data sheet includes the description, features, and specifications for this six-core digital processor.

MSC8154E Quad-Core Digital Signal Processor with Security - Data Sheet

This MSC8154E data sheet includes the description, features, and specifications for this quad-core digital processor with Security

MRFG35003N6AT1, 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT

Designed for WLL/MMDS/BWA or UMTS applications with frequencies from 500 to 5000 MHz.

MRFE8VP8600H 140 W Avg, 470-870 MHz, 50 V Data Sheet

MRFE8VP8600H 140 W Avg over 470-870 MHz, 50 V RF power LDMOS transistor for UHF TV broadcast applications

MRFE6VS25L 1.8-2000 MHz, 25 W, 50 V Data Sheet

MRFE6VS25L 25 W CW over 1.8-2000 MHz, 50 V high ruggedness RF power LDMOS transistor for narrowband and broadband ISM, broadcast and aerospace applications